JPS6152589B2 - - Google Patents

Info

Publication number
JPS6152589B2
JPS6152589B2 JP54032822A JP3282279A JPS6152589B2 JP S6152589 B2 JPS6152589 B2 JP S6152589B2 JP 54032822 A JP54032822 A JP 54032822A JP 3282279 A JP3282279 A JP 3282279A JP S6152589 B2 JPS6152589 B2 JP S6152589B2
Authority
JP
Japan
Prior art keywords
region
drain
semiconductor crystal
regions
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54032822A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55124264A (en
Inventor
Takeshi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3282279A priority Critical patent/JPS55124264A/ja
Publication of JPS55124264A publication Critical patent/JPS55124264A/ja
Publication of JPS6152589B2 publication Critical patent/JPS6152589B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Non-Volatile Memory (AREA)
JP3282279A 1979-03-20 1979-03-20 Mis field effect transistor Granted JPS55124264A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3282279A JPS55124264A (en) 1979-03-20 1979-03-20 Mis field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3282279A JPS55124264A (en) 1979-03-20 1979-03-20 Mis field effect transistor

Publications (2)

Publication Number Publication Date
JPS55124264A JPS55124264A (en) 1980-09-25
JPS6152589B2 true JPS6152589B2 (en]) 1986-11-13

Family

ID=12369515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3282279A Granted JPS55124264A (en) 1979-03-20 1979-03-20 Mis field effect transistor

Country Status (1)

Country Link
JP (1) JPS55124264A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0174996U (en]) * 1987-11-09 1989-05-22

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0174996U (en]) * 1987-11-09 1989-05-22

Also Published As

Publication number Publication date
JPS55124264A (en) 1980-09-25

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